用 途 | 外延，测试 |
| 产品尺寸 | dia150mm |
| 表面处理 | 抛光，研磨，切割面 |
| 生长方式 | PVT |
| 厚 度 | 350um，500um |
| 掺杂类型 | N型， |
| 晶 向 | 4°off |
| 电 阻 率 | 按要求 |
6 inch diameter, Silicon Carbide (SiC) Substrate Specification
Grade Zero MPD Grade Production Grade Research Grade Dummy Grade
Diameter 150.0 mm±0.2mm
ThicknessΔ 350 μm±25μm or 500±25un
Wafer Orientation Off axis : 4.0° toward< 1120> ±0.5° for 4H-N On axis : <0001>±0.5° for 6H-SI/4H-SI
Primary Flat {10-10}±5.0°
Primary Flat Length 47.5 mm±2.5 mm
Edge exclusion 3 mm
TTV/Bow /Warp ≤15μm /≤40μm /≤60μm
Micropipe Density ≤1 cm-2 ≤5 cm-2 ≤15 cm-2 ≤100 cm-2
Resistivity 4H-N 0.015~0.028 Ω·cm
4/6H-SI ≥1E5 Ω·cm
Roughness Polish Ra≤1 nm
CMP Ra≤0.5 nm
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