碳化硅6寸/8寸感应式长晶炉Silicon Carbide 6-inch/8-inch Induction Growing Furnace
参数特征 Parametric features 优点利处
炉室内径:φ400mm;
② 极限真空度:6x10-4 Pa; 腔体压升率:≤5Pa/12h(煅烧后); ① 满足6吋/8吋晶体生长; 满足半绝缘和导电型晶体生长环境,线圈超慢速提
③
⑤⑦⑥加热方式:感应加热,炉底盘行程:1250mm;炉内最高温度:2300℃;感应线圈行程:200mm;④升减少扰动;温度实时精确监控便于工艺调试;稳定的长晶环境,利于生长高品质晶体;双层石英筒水冷结构,可有效提高腔室寿命,提供
⑨ 控温精度:±1℃; 控压范围:1-700mbar; 测温范围:900-3000℃; 测温方式:双色红外测温; 控压精度:1-10mbanr,±0.5%F.S; 装料方式:下部装料,操作方便、安全; 加热电源:Pmax=40Kw,频率7-10KHz; 10-100mbanr,±0.5%F.S; 100-700mbanr,±0.5%F.S; 率; 意选择; 辑方便,可实现一键自动碳化硅长晶全过程; 配方采用了二维表格,工艺控制逻辑清晰,配方编 紧凑立体化的整机设计,方便布局,提高厂房利用 设备控制系统采用多种先进算法,控制精度高。尤 加热控制方式可在功率、或者温度控制二种模式任 其在晶体生长压力下最高可达到±3Pa的控压精度。
可选配置:坩埚旋转、上下料叉车、双测温点、热场及基础工艺包。
Chamber diameter:p400mm; Ultimate vacuum: 6 x 10-4 Pa;
Chamber pressure rise rate: ≤5 Pa/12 h (after calcination); Induction coil stroke:200mm;
Stroke of furnace chassis:1250mm; Heating mode: induction heating;
Maximum temperature inside the furnace: 2300℃;
Heating power supply:Pmax=40Kw, frequency 7-10KHz;
Temperature measurement mode: two-color infrared temperature measurement; Temperature measurement range:900-3000C; Temperature control accuracy:+1C; Pressure control range:1-700mbar;
Pressure control accuracy:1-10mbanr,±0.5%F.S; 10-100mbanr,±0.5%F.S; 100-700mbanr,±0.5%F.S; Charging mode: lower loading, convenient and safe operation;.
Optional configuration: crucible rotation, loading and unloading forklift, double temperature measurement point, hot field and basic process package.